Voltage-Tunable Quantum-Dot Array by Patterned <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ge</mml:mi></mml:math> -Nanowire-Based Metal-Oxide-Semiconductor Devices

Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics biosensing applications well domain q-bits based information processing. Such QDs suitable several novel device their unique property confining carriers 3-dimensionally creating discrete states. However, realization such in practice exhibits serious challenge regarding fabrication array with desired scalability repeatability control over states at room temperature. In this context, current work reports an highly scaled Ge-nanowire (radius ~25 nm) vertical metal-oxide-semiconductor devices that can operate voltage tunable The electrons nanowire experience geometrical confinement radial direction, whereas, they be confined axially by tuning applied bias order to manipulate has been confirmed from step-like responses temperature capacitance-voltage (C-V) characteristics relatively low frequency (200 kHz). Each steps observed encompass convolution quantized occupying ~6 electronic charges. details carrier analyzed theoretically modeling transport properties on non-equilibrium Green's function (NEGF) formalism.